Electrical characteristics of organic/inorganic Pt(II) complex/p-Si semiconductor contacts

被引：17

作者：

Imer, A. Gencer ^{[1
]}

Temirci, C. ^{[1
]}

Gulcan, M. ^{[2
]}

Sonmez, M. ^{[3
]}

机构：

[1] Yuzuncu Yil Univ, Fac Sci, Dept Phys, TR-65080 Van, Turkey

[2] Yuzuncu Yil Univ, Fac Sci, Dept Chem, TR-65080 Van, Turkey

[3] Gaziantep Univ, Fac Sci & Arts, Dept Chem, TR-27310 Gaziantep, Turkey

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2014年 / 28卷

关键词：

Contact; Organic; Rectifier; Schottky; Diode; NONPOLYMERIC ORGANIC-COMPOUND; SCHOTTKY-BARRIER; ELECTRONIC-PROPERTIES; PHOTOVOLTAIC PROPERTIES; DIODE; HEIGHT; FABRICATION; DEPENDENCE; JUNCTIONS; LAYER;

D O I：

10.1016/j.mssp.2014.03.035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We produced Pt(II)) complexes using the bidentate ligand N-aminopyrimidine-2-thione (APTH). The optical transmission of thin Pt-APTH films was measured. The optical bandgap of the material was 2.58 eV. With the expectation that it might have semiconductor properties and that the Pt-APTH complex might exhibit rectifier behavior when brought into appropriate contact with a semiconductor, we fabricated Pt-APTH/p-Si contacts by direct addition of a solution of Pt-APTH to the front side of p-Si wafers. Forward bias current-voltage measurements revealed satisfactory rectifying behavior for the Pt-APTH/p-Si contacts, with a mean rectification ratio of 4.40 x 10(2) and a mean barrier height of 0.765 eV. Cheung and Norde functions were used to obtain and verify some electrical characteristics of the contacts. The results obtained from both methods are compared and discussed. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：31 / 36

页数：6

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