Spin-memory effect and negative magnetoresistance in hopping conductivity

被引：10

作者：

Agam, Oded ^{[1
,2
]}

Aleiner, Igor L. ^{[1
]}

Spivak, Boris ^{[3
]}

机构：

[1] Columbia Univ, Dept Phys, New York, NY 10027 USA

[2] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel

[3] Univ Washington, Dept Phys, Seattle, WA 98195 USA

来源：

PHYSICAL REVIEW B | 2014年 / 89卷 / 10期

关键词：

MAGNETIC-FIELD; LOCALIZATION; DIFFUSION; FILMS;

D O I：

10.1103/PhysRevB.89.100201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose a mechanism for negative isotropic magnetoresistance in the hopping regime. It results from a memory effect encrypted into spin correlations that are not taken into account by the conventional theory of hopping conductivity. The spin correlations are generated by the nonequilibrium electric currents and lead to the decrease of the conductivity. The application of the magnetic field destroys the correlations thus enhancing the conductance. This effect can occur even at magnetic fields as small as a few gauss.

引用

页数：4

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