Ambipolar pentacene field-effect transistors with calcium source-drain electrodes

被引：214

作者：

Yasuda, T ^{[1
]}

Goto, T ^{[1
]}

Fujita, K ^{[1
]}

Tsutsui, T ^{[1
]}

机构：

[1] Kyushu Univ, Grad Sch Engn Sci, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 11期

关键词：

D O I：

10.1063/1.1794375

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Field-effect transistors consisted of vacuum-sublimed polycrystalline pentacene films and calcium source-drain electrodes were prepared and device characteristics were evaluated in an oxygen-free condition. The field-effect transistor showed typical ambipolar characteristics and field-effect hole mobility of 4.5x10(-4) cm(2)/Vs and field-effect electron mobility of 2.7x10(-5) cm(2)/Vs were estimated from saturation currents. Appearance of an electron enhancement mode in pentacene field-effect transistors was ascribed to the lowering of barrier for electron injection at source-drain electrodes. Effective elimination of electron traps using an oxygen-free condition was found to be another requirement for the observation of ambipolar behavior in pentacene. (C) 2004 American Institute of Physics.

引用

页码：2098 / 2100

页数：3

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