Nonequilibrium spin injection in monolayer black phosphorus

被引:51
作者
Chen, Mingyan [1 ,2 ,3 ]
Yu, Zhizhou [2 ,3 ,4 ]
Wang, Yin [2 ,3 ,4 ]
Xie, Yiqun [1 ,5 ,6 ]
Wang, Jian [2 ,3 ,4 ]
Guo, Hong [2 ,3 ,5 ,6 ]
机构
[1] Shanghai Normal Univ, Dept Phys, 100 Guilin Rd, Shanghai 200232, Peoples R China
[2] Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China
[3] Univ Hong Kong, Ctr Theoret & Computat Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China
[4] Univ Hong Kong, Shenzhen Inst Res & Innovat, Shenzhen 518048, Guangdong, Peoples R China
[5] McGill Univ, Ctr Phys Mat, Montreal, PQ H3A 2T8, Canada
[6] McGill Univ, Dept Phys, 3600 Univ St, Montreal, PQ H3A 2T8, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
ROOM-TEMPERATURE; MAGNETORESISTANCE; ELECTRONICS; TRANSPORT; MAGNETISM; SURFACES;
D O I
10.1039/c5cp04652a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Monolayer black phosphorus (MBP) is an interesting emerging electronic material with a direct band gap and relatively high carrier mobility. In this work we report a theoretical investigation of nonequilibrium spin injection and spin-polarized quantum transport in MBP from ferromagnetic Ni contacts, in two-dimensional magnetic tunneling structures. We investigate physical properties such as the spin injection efficiency, the tunnel magnetoresistance ratio, spin-polarized currents, charge currents and transmission coefficients as a function of external bias voltage, for two different device contact structures where MBP is contacted by Ni(111) and by Ni(100). While both structures are predicted to give respectable spin-polarized quantum transport, the Ni(100)/MBP/Ni(100) trilayer has the superior properties where the spin injection and magnetoresistance ratio maintains almost a constant value against the bias voltage. The nonequilibrium quantum transport phenomenon is understood by analyzing the transmission spectrum at nonequilibrium.
引用
收藏
页码:1601 / 1606
页数:6
相关论文
共 48 条
  • [1] SURFACE MAGNETISM IN IRON, COBALT, AND NICKEL
    ALDEN, M
    MIRBT, S
    SKRIVER, HL
    ROSENGAARD, NM
    JOHANSSON, B
    [J]. PHYSICAL REVIEW B, 1992, 46 (10): : 6303 - 6312
  • [2] BAND THEORY AND MOTT INSULATORS - HUBBARD-U INSTEAD OF STONER-I
    ANISIMOV, VI
    ZAANEN, J
    ANDERSEN, OK
    [J]. PHYSICAL REVIEW B, 1991, 44 (03): : 943 - 954
  • [3] Behin-Aein B, 2010, NAT NANOTECHNOL, V5, P266, DOI [10.1038/NNANO.2010.31, 10.1038/nnano.2010.31]
  • [4] Spin-dependent tunneling conductance of Fe|MgO|Fe sandwiches -: art. no. 054416
    Butler, WH
    Zhang, XG
    Schulthess, TC
    MacLaren, JM
    [J]. PHYSICAL REVIEW B, 2001, 63 (05)
  • [5] Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts
    Chen, Jen-Ru
    Odenthal, Patrick M.
    Swartz, Adrian G.
    Floyd, George Charles
    Wen, Hua
    Luo, Kelly Yunqiu
    Kawakami, Roland K.
    [J]. NANO LETTERS, 2013, 13 (07) : 3106 - 3110
  • [6] Density functional study of Ni bulk, surfaces and the adsorbate systems Ni(111)(√3 x √3)R30°-Cl, and Ni(111)(2x2)-K
    Doll, K
    [J]. SURFACE SCIENCE, 2003, 544 (01) : 103 - 120
  • [7] Efficient spin injection and giant magnetoresistance in Fe/MoS2/Fe junctions
    Dolui, Kapildeb
    Narayan, Awadhesh
    Rungger, Ivan
    Sanvito, Stefano
    [J]. PHYSICAL REVIEW B, 2014, 90 (04)
  • [8] Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study
    Dudarev, SL
    Botton, GA
    Savrasov, SY
    Humphreys, CJ
    Sutton, AP
    [J]. PHYSICAL REVIEW B, 1998, 57 (03) : 1505 - 1509
  • [9] Fiori G, 2014, NAT NANOTECHNOL, V9, P768, DOI [10.1038/nnano.2014.207, 10.1038/NNANO.2014.207]
  • [10] MAGNETISM OF SURFACES AND INTERFACES
    FREEMAN, AJ
    WANG, DS
    KRAKAUER, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1997 - 2001