Effects of the material polarity on the green emission properties of InGaN/GaN multiple quantum wells

被引：29
作者：
Lai, Yen-Lin
Liu, Chuan-Pu [1 ]
Lin, Yung-Hsiang
Lin, Ray-Ming
Lyu, Dong-Yuan
Peng, Zhao-Xiang
Lin, Tai-Yuan
机构：
[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan
[2] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan
[3] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Chilung 206, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 15期
关键词：
D O I：
10.1063/1.2360247
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Green-light-emission InGaN/GaN multiple quantum wells (MQWs) with different polarities were grown by metal organic chemical vapor deposition. A clear phase separation was observed both in the Ga- and N-polarity samples by high resolution transmission electron microscopy, corresponding to two InGaN-related emissions (In-rich dots and an InGaN matrix) seen in photoluminescence spectra. The dot-related emission in the Ga-polarity MQWs shows stronger carrier localization, as well as a weak influence of defects and temperature insensitivity, when compared to the N-polarity MQWs. In addition, efficient carrier transport, from the low-indium InGaN matrix to high-indium In-rich dots, was observed in the Ga-polarity structure, enhancing the function of quantum-dot structures with Ga polarity, and resulting in a high quantum yield of green light emission. (c) 2006 American Institute of Physics.
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