Mask-free patterning and selective CVD-growth of 2D-TMDCs semiconductors

被引:5
作者
Alameri, Dheyaa [1 ]
Nasr, Joseph R. [2 ]
Karbach, Devon [1 ]
Liu, Yuzi [3 ]
Divan, Ralu [3 ]
Das, Saptarshi [2 ]
Kuljanishvili, Irma [1 ]
机构
[1] St Louis Univ, Dept Phys, St Louis, MO 63103 USA
[2] Penn State Univ, Engn Sci & Mech, University Pk, PA 16802 USA
[3] Argonne Natl Lab, Ctr Nanoscale Mat, 9700 South Cass Ave, Argonne, IL 60439 USA
基金
美国国家科学基金会;
关键词
2D-TMDCs; MoS2; WS2; chemical vapor deposition; direct-write patterning; VAPOR-DEPOSITION GROWTH; LARGE-AREA; MOS2; WS2; PHOTOLUMINESCENCE; HETEROSTRUCTURES; RAMAN; DECOMPOSITION; HYSTERESIS; EVOLUTION;
D O I
10.1088/1361-6641/ab28db
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work reports on a novel mask-free approach that enables controlled selective growth of molybdenum disulfide (MoS2) and tungsten disulfide (WS2) crystalline islands on Si/SiO2 substrates. In particular, the direct-write patterning technique and chemical vapor deposition method are employed to produce arrays of 2D-TMDCs nanostructures at pre-defined locations on the substrates. It is shown that by adjusting the patterning parameters, composition and concentrations of ink-precursors, and the growth conditions, patterns of MoS2 and WS2 nanostructures with controlled geometry can be produced. The prepared 2D-TMDCs materials were analyzed by atomic force microscopy, Raman spectroscopy, transmission electron microscopy, and x-ray photoelectron spectroscopy, all of which indicated to high-quality double-layer MoS2 and WS2 nanostructures. The back-gated field effect transistors were fabricated, and their charge carrier mobility values of 11 cm(2) V-1 s(-1) for MoS2 and 4 cm(2) V-1 s(-1) for WS2 were extracted from the device measurements.
引用
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页数:10
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  • [1] Mask-free fabrication and chemical vapor deposition synthesis of ultrathin zinc oxide microribbons on Si/SiO2 and 2D substrates
    Alameri, Dheyaa
    Ocola, Leonidas E.
    Kuljanishvili, Irma
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2018, 36 (05):
  • [2] Controlled Selective CVD Growth of ZnO Nanowires Enabled by Mask-Free Fabrication Approach using Aqueous Fe Catalytic Inks
    Alameri, Dheyaa
    Ocola, Leonidas E.
    Kuljanshvili, Irma
    [J]. ADVANCED MATERIALS INTERFACES, 2017, 4 (24):
  • [3] Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors
    Arnold, Andrew J.
    Razavieh, Ali
    Nasr, Joseph R.
    Schulman, Daniel S.
    Eichfeld, Chad M.
    Das, Saptarshi
    [J]. ACS NANO, 2017, 11 (03) : 3110 - 3118
  • [4] Chemical vapor deposition of monolayer MoS2 directly on ultrathin Al2O3 for low-power electronics
    Bergeron, Hadallia
    Sangwan, Vinod K.
    McMorrow, Julian J.
    Campbell, Gavin P.
    Balla, Itamar
    Liu, Xiaolong
    Bedzyk, Michael J.
    Marks, Tobin J.
    Hersam, Mark C.
    [J]. APPLIED PHYSICS LETTERS, 2017, 110 (05)
  • [5] Recent Advances in Two-Dimensional Materials beyond Graphene
    Bhimanapati, Ganesh R.
    Lin, Zhong
    Meunier, Vincent
    Jung, Yeonwoong
    Cha, Judy
    Das, Saptarshi
    Xiao, Di
    Son, Youngwoo
    Strano, Michael S.
    Cooper, Valentino R.
    Liang, Liangbo
    Louie, Steven G.
    Ringe, Emilie
    Zhou, Wu
    Kim, Steve S.
    Naik, Rajesh R.
    Sumpter, Bobby G.
    Terrones, Humberto
    Xia, Fengnian
    Wang, Yeliang
    Zhu, Jun
    Akinwande, Deji
    Alem, Nasim
    Schuller, Jon A.
    Schaak, Raymond E.
    Terrones, Mauricio
    Robinson, Joshua A.
    [J]. ACS NANO, 2015, 9 (12) : 11509 - 11539
  • [6] Synthetic approaches to two-dimensional transition metal dichalcogenide nanosheets
    Brent, Jack R.
    Savjani, Nicky
    O'Brien, Paul
    [J]. PROGRESS IN MATERIALS SCIENCE, 2017, 89 : 411 - 478
  • [7] A roadmap for electronic grade 2D materials
    Briggs, Natalie
    Subramanian, Shruti
    Lin, Zhong
    Li, Xufan
    Zhang, Xiaotian
    Zhang, Kehao
    Xiao, Kai
    Geohegan, David
    Wallace, Robert
    Chen, Long-Qing
    Terrones, Mauricio
    Ebrahimi, Aida
    Das, Saptarshi
    Redwing, Joan
    Hinkle, Christopher
    Momeni, Kasra
    van Duin, Adri
    Crespi, Vin
    Kar, Swastik
    Robinson, Joshua A.
    [J]. 2D MATERIALS, 2019, 6 (02)
  • [8] THERMAL AND REDUCTIVE DECOMPOSITION OF AMMONIUM THIOMOLYBDATES
    BRITO, JL
    ILIJA, M
    HERNANDEZ, P
    [J]. THERMOCHIMICA ACTA, 1995, 256 (02) : 325 - 338
  • [9] Role of Chemical Potential in Flake Shape and Edge Properties of Mono layer MoS2
    Cao, Dan
    Shen, Tao
    Liang, Pei
    Chen, Xiaoshuang
    Shu, Haibo
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (08) : 4294 - 4301
  • [10] Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy
    Chen, Kun
    Wan, Xi
    Xie, Weiguang
    Wen, Jinxiu
    Kang, Zhiwen
    Zeng, Xiaoliang
    Chen, Huanjun
    Xu, Jianbin
    [J]. ADVANCED MATERIALS, 2015, 27 (41) : 6431 - +