Gate-controlled resonant interband tunneling in silicon

被引：14
作者：
Sedlmaier, S
Bhuwalka, KK
Ludsteck, A
Schmidt, M
Schulze, J
Hansch, W
Eisele, I
机构：
[1] Univ Bundeswehr Muenchen, Inst Phys, D-85577 Neubiberg, Germany
[2] Tech Univ Muenchen, Inst Tech Elect, D-80290 Munich, Germany
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 10期
关键词：
D O I：
10.1063/1.1783023
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present gate-controlled resonant interband tunneling on silicon <111>. The investigated structure principally consists of a vertical, gated p-i-n diode grown by molecular beam epitaxy. We evaluated the surface tunnel current from a gate-induced two-dimensional electron channel into the quantized hole states of a degenerately doped deltap(+) layer. This current reveals a negative differential resistance due to resonant interband tunneling in the forward biased p-i-n diode at 200 K. Even at room temperature the influence of this tunnel mechanism is observed. The experimental results are in good agreement with simulated band diagrams and their dependence on the applied voltages. (C) 2004 American Institute of Physics.
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页码：1707 / 1709
页数：3
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