Pulse autocorrelation measurements based on two- and three-photon conductivity in a GaN photodiode

被引：67

作者：

Streltsov, AM ^{[1
]}

Moll, KD

Gaeta, AL

Kung, P

Walker, D

Razeghi, M

机构：

[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[2] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 24期

关键词：

D O I：

10.1063/1.125453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We characterize the performance of a GaN p-i-n photodiode as a nonlinear sensor for second- and third-order femtosecond pulse autocorrelation measurements in the visible and near-infrared regimes, respectively. The two- and three-photon absorption coefficients for GaN are also determined. (C) 1999 American Institute of Physics. [S0003-6951(99)01750-7].

引用

页码：3778 / 3780

页数：3

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