Hydrogen-terminated diamond surfaces and interfaces

被引:475
|
作者
Kawarada, H
机构
[1] School of Science and Engineering, Waseda University, Tokyo 169, Ohkubo 3-4-1, Shinjuku-ku
关键词
D O I
10.1016/S0167-5729(97)80002-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Surfaces and interfaces of hydrogen-terminated diamonds are reviewed. The control and preparation of diamond surfaces have been greatly advanced by the recent progress in epitaxial growth, which is discussed in Section 2. In Section 3, the hydrogen-terminated surfaces of (111) and (001) are explained in terms of types of hydrides, surface reconstructions, stability of surface C-H bonds, and surface p-type conduction. In Section 4, metal/diamond contacts are reviewed. Schottky and ohmic properties are discussed on the basis of hydrogen termination, surface treatment, metal electronegativity, interfacial reaction, and surface states. The first application of hydrogen-terminated surfaces as electron devices is presented for the metal-semiconductor field effect transistor.
引用
收藏
页码:205 / 259
页数:55
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