Analysis of electrically active N-O complexes in nitrogen-doped CZ silicon crystals by FTIR spectroscopy

被引：9

作者：

Alt, H. Ch. ^{[1
]}

Gomeniuk, Y. V.

Bittersberger, F.

Kempf, A.

Zemke, D.

机构：

[1] Munich Univ Appl Sci, Dept Engn Phys, FHM, D-80001 Munich, Germany

[2] Siltronic AG, D-84479 Burghausen, Germany

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2006年 / 9卷 / 1-3期

关键词：

CZ silicon; nitrogen; oxygen; FTIR spectroscopy;

D O I：

10.1016/j.mssp.2006.01.035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitrogen-doped CZ silicon crystals with different oxygen contents were studied by quantitative FTIR spectroscopy. Thermal-equilibrium annealing at 600 degrees C is suitable to obtain information on the chemical composition of N-O related shallow donors. All species investigated (N-O-1, N-O-2, N-O-3, and N-O-5) contain one nitrogen atom. However, different numbers of oxygen atoms are involved. N-O-5 incorporates the lowest number, probably two; N-O-3 contains one oxygen atom more, whereas N-O-1 and N-O-2 contain two more. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：114 / 116

页数：3

共 7 条

[1] Shallow thermal donor defects in silicon [J].

Ewels, CP ;

Jones, R ;

Oberg, S ;

Miro, J ;

Deak, P .

PHYSICAL REVIEW LETTERS, 1996, 77 (05) :865-868

[2] IDENTIFICATION OF THE DOMINANT NITROGEN DEFECT IN SILICON [J].

JONES, R ;

OBERG, S ;

RASMUSSEN, FB ;

NIELSEN, BB .

PHYSICAL REVIEW LETTERS, 1994, 72 (12) :1882-1885

[3] NITROGEN-OXYGEN COMPLEXES AS SHALLOW DONORS IN SILICON-CRYSTALS [J].

SUEZAWA, M ;

SUMINO, K ;

HARADA, H ;

ABE, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (10) :L859-L861

[4] THE NATURE OF NITROGEN-OXYGEN COMPLEXES IN SILICON [J].

SUEZAWA, M ;

SUMINO, K ;

HARADA, H ;

ABE, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (01) :62-67

[5] The impact of nitrogen on the defect aggregation in silicon [J].

von Ammon, W ;

Hölzl, R ;

Virbulis, J ;

Dornberger, E ;

Schmolke, R ;

Gräf, D .

JOURNAL OF CRYSTAL GROWTH, 2001, 226 (01) :19-30

[6] Shallow thermal donors in nitrogen-doped silicon [J].

Voronkov, VV ;

Porrini, M ;

Collareta, P ;

Pretto, MG ;

Scala, R ;

Falster, R ;

Voronkova, GI ;

Batunina, AV ;

Golovina, VN ;

Arapkina, LV ;

Guliaeva, AS ;

Milvidski, MG .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (08) :4289-4293

[7]

Yang DR, 1996, APPL PHYS LETT, V68, P487, DOI 10.1063/1.116422

← 1 →