Thermodynamic and surface properties of liquid Ge-Si alloys

被引：16

作者：

Amore, S. ^{[1
]}

Giuranno, D. ^{[1
]}

Novakovic, R. ^{[1
]}

Ricci, E. ^{[1
]}

Nowak, R. ^{[2
]}

Sobczak, N. ^{[2
]}

机构：

[1] CNR, Inst Energet & Interphases CNR IENI, I-16149 Genoa, Italy

[2] Foundry Res Inst CHTS, PL-30418 Krakow, Poland

来源：

CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY | 2014年 / 44卷

关键词：

Equilibrium thermodynamics and statistical mechanics; Liquid surfaces; Surface tension; Silicon; Germanium; Alloys; SHORT-RANGE ORDER; CONCENTRATION FLUCTUATIONS; THERMOPHYSICAL PROPERTIES; TENSION; SEGREGATION; SN;

D O I：

10.1016/j.calphad.2013.07.014

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

In the present work, the surface tension of liquid Si and Ge has been measured by the pendant/sessile drop combined method over the temperature range of 1723-1908 K and 1233-1313 K, respectively. The new surface tension data, the molar volumes and the melting temperatures of silicon and germanium as well as the excess Gibbs energy data of the Ge Si liquid phase are the inputs for Calphad type modelling to study the mixing behaviour in alloy melts. The energetics of mixing in liquid Ge Si system has been analysed through the study of the concentration dependence of various thermodynamic (activity, enthalpy of mixing, Gibbs energy of mixing), surface (surface tension and surface composition) and transport (diffusivity) properties as well as the microscopic functions (concentration fluctuations in the long-wavelength limit and chemical short-range order parameter) in the framework of statistical mechanical theory in conjunction with the Quasi-Lattice Theory (QLT). (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：95 / 101

页数：7

共 46 条

[1]

[Anonymous], XRAY DIFFRACTION

[2]

Bergman C., 1992, J. Phase Equilibria, V13, P113, DOI [10.1007/BF02667471, DOI 10.1007/BF02667471]

[3] Structural aspects of the electrical resistivity of binary alloys [J].

Bhatia, A. B. ;

Thornton, D. E. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (08) :3004-3012

[4] SHORT-RANGE ORDER AND CONCENTRATION FLUCTUATIONS IN REGULAR AND COMPOUND FORMING MOLTEN ALLOYS [J].

BHATIA, AB ;

SINGH, RN .

PHYSICS AND CHEMISTRY OF LIQUIDS, 1982, 11 (04) :285-313

[5] Si/Ge nanostructures [J].

Brunner, K .

REPORTS ON PROGRESS IN PHYSICS, 2002, 65 (01) :27-72

[6] The thermodynamics of the surfaces of solution [J].

Butler, JAV .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1932, 135 (827) :348-375

[7] Thermophysical properties of highly doped Si and Ge melts under microgravity [J].

Chathoth, S. M. ;

Damaschke, B. ;

Samwer, K. ;

Schneider, S. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (10)

[8]

Chathoth S.M., 2008, APPL PHYS LETT, V93

[9] Study of the Fundamental Units of Novel Semiconductor Materials: Structures, Energetics, and Thermodynamics of the Ge-Sn and Si-Ge-Sn Molecular Systems [J].

Ciccioli, A. ;

Gigli, G. .

JOURNAL OF PHYSICAL CHEMISTRY A, 2012, 116 (26) :7107-7122

[10] AN APPROXIMATE THEORY OF ORDER IN ALLOYS [J].

COWLEY, JM .

PHYSICAL REVIEW, 1950, 77 (05) :669-675

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