Lone-pair electrons induced anomalous enhancement of thermal transport in strained planar two-dimensional materials

被引:60
作者
Qin, Guangzhao [1 ]
Qin, Zhenzhen [2 ]
Wang, Huimin [1 ]
Hu, Ming [1 ,2 ,3 ]
机构
[1] Rhein Westfal TH Aachen, Fac Georesources & Mat Engn, Div Mat Sci & Engn, Inst Mineral Engn, D-52064 Aachen, Germany
[2] Rhein Westfal TH Aachen, Aachen Inst Adv Study Computat Engn Sci AICES, D-52062 Aachen, Germany
[3] Univ South Carolina, Dept Mech Engn, Columbia, SC 29208 USA
关键词
Strain; Two-dimensional; Thermal transport; First-principles; Lone-pair electrons; THERMOELECTRIC-MATERIALS; PHONON TRANSPORT; CONDUCTIVITY; LAYER; GRAPHENE; GAN; INTERCALATION; MONOLAYER; HEAT;
D O I
10.1016/j.nanoen.2018.05.040
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Strain engineering is one of the most promising and effective routes towards continuously tuning thermal transport due to the flexibility and robustness. However, previous studies mainly focused on quantifying how the thermal conductivity (kappa) is modulated by strain, while the fundamental understanding on the electronic origin has yet to be explored. In this paper, we establish a microscopic picture of the lone-pair electrons driving strong phonon anharmonicity in two-dimensional (2D) materials beyond the traditional three-dimensional (3D) systems. We provide solid explanation for the unexpectedly up to one order of magnitude enlarged kappa of a class of planar monolayers with bilateral tensile strain applied, which is in sharp contrast to the strain induced kappa reduction in graphene despite their similar planar structures. The anomalous positive response of kappa to tensile strain is attributed to the attenuated interaction between the lone-pair electrons and the bonding electrons of neighboring atoms, which reduces phonon anharmonicity and leads to the enlarged kappa. Our study uncovers the electronic origin of the strain modulated thermal transport, which would have great impact on future investigations related to energy nanotechnologies and applications.
引用
收藏
页码:425 / 430
页数:6
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