The tunneling magnetic resistance in ferromagnetic junctions with spin-filter composite tunnel barriers

被引：3

作者：

Xie, ZhengWei ^{[1
]}

Lv, Houxiang ^{[1
]}

Li, Ling ^{[1
]}

Xu, Ming ^{[2
]}

机构：

[1] Sichuan Normal Univ, Coll Phys & Elect Engn, Chengdu 610066, Sichuan, Peoples R China

[2] Southwest Univ Nationalities, Coll Elect Informat Engn, Key Lab Informat Mat Sichuan Prov, Chengdu 610041, Peoples R China

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2016年 / 405卷

关键词：

Spin-filter; Tunnel magnetoresistance; Bias; Magnetic tunnel junction; Barrier; MAGNETORESISTANCE; POLARIZATION; EMISSION; FIELD;

D O I：

10.1016/j.jmmm.2015.12.054

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Within the framework of the free-electron model, the tunneling magnetoresistance (TMR) in FM/I/SF/NM quasi-magnetic tunnel junctions (QMTJ) is investigated. FM, NM, I and SF represent the ferromagnetic metal, nonmagnetic metal, insulator and spin-filter barrier, respectively. Our results show that due to the spin filtering effect in SF potential barriers, the FM/I/SF/NM can obtain relatively stabilized TMR in higher bias region when it has higher potential height and thicker SF barrier. And, for obtaining large TMR, the total thickness of the barrier region would be carefully selected as the influence of the supplementary I layer. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：353 / 357

页数：5

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