Effect of exponential doping structure on diffusion length of reflection-mode GaN NEA photocathodes

被引：5

作者：

Fu, Jiangtao ^{[1
]}

Liu, Wei ^{[1
]}

Zhang, Songchun ^{[1
]}

Ma, Huahong ^{[1
]}

机构：

[1] Henan Univ Sci & Technol, Inst Elect Informat Engn, Luoyang 471003, Peoples R China

来源：

OPTIK | 2014年 / 125卷 / 03期

关键词：

GaN photocathode; Exponential doping; Quantum efficiency; Diffusion length; QUANTUM EFFICIENCY;

D O I：

10.1016/j.ijleo.2013.09.003

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In order to improve the performance of the photocathode, a kind of photocathode with exponential doping structure is designed and grown: meanwhile two other kinds of photocathodes with uniform doping structure and gradient doping structure are also designed. Through comparing their quantum efficiencies, the exponential doping photocathode has the best quantum efficiency. The inherent mechanism leading to the increase of the diffusion length is analyzed in detail. The diffusion length formula of the photo excited electron in the exponential doping structure is deduced, and the diffusion length in the activation layer is calculated. The result has significance to further study the GaN photocathode. (C) 2013 Elsevier GmbH. All rights reserved.

引用

页码：1485 / 1487

页数：3

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