A study of the threshold voltage variations for ultrathin body double gate SOI MOSFETs

被引：0

作者：

Tang, CS ^{[1
]}

Lo, SC ^{[1
]}

Lee, JW ^{[1
]}

Tsai, JH ^{[1
]}

Li, YM ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

来源：

NSTI NANOTECH 2004, VOL 3, TECHNICAL PROCEEDINGS | 2004年

关键词：

double-gate devices; ultrathin body; quantum mechanical effects; threshold voltage; modeling and simulation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon on insulator (SOI) devices have been of great interest in these years. In this paper, simulation with density-gradient transport model is performed to examine the variation of threshold voltage (VTH) for double gate SOI MOSFETs. Different thickness of silicon (Si) film, oxide thickness, channel length and doping concentration are considered in this work. According to the numerical study, both drift-difftision (DD) and density gradient (DG) models demonstrate that the thickness of Si film greatly affects the threshold voltage (5 similar to 15% variation). It is found that the thickness of Si film decreases, VTH variation increases; and the dependence relation is nonlinear. Therefore, this effect must be taken into account for the realization of double gate SOI ULSI circuit.

引用

页码：145 / 148

页数：4

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