Study of variable range hopping conduction mechanism in nanocrystalline carbon thin films deposited by modified anodic jet carbon arc technique: application to light-dependent resistors

In this study, we report the deposition of nanocrystalline carbon thin films by modified anodic jet carbon arc technique assisted with inert-helium and reactive-nitrogen gaseous environments. The modified anodic jet technique facilitates to generate a very high localized pressure near the arc spot for the growth of nanocrystallites of carbon at high arc temperature and high pressure. The deposited films were analyzed for the growth of nanocrystallites in amorphous carbon structure under high-resolution transmission electron microscopy (HRTEM). The HRTEM studies reveal the distribution of nanocrystallites in the amorphous carbon matrix. The temperature-dependent conduction behavior of the deposited films has also been analyzed under Mott's variable range hopping conduction mechanism. Both sets of the film are found to follow three-dimensional variable range hopping conduction mechanisms for the transport of charge carriers. The deposited films are also analyzed for their applications to energy-saving light-dependent resistors under an illumination intensity of similar to 100 mW/cm(2) of white light. The reasonably high value of detectivity values similar to 1.26 x 10(6) and 3.12 x 10(6) Jones and relatively lower values of trap depth 0.6826 and 0.6834 eV for the nanocrystalline films deposited in helium and nitrogen environments suggest trapped state-assisted significantly high power conversion efficiency. This supports the suitability of the deposited films for light-dependent resistor applications.