Numerical investigation of one-intermediate band InN/GaN QW solar cell under electric field, impurity and size effects

In this paper, photovoltaic conversion efficiency of one-intermediate band solar cell based on GaN/InN/GaN quantum well emerged in the intrinsic region of standard p-i-n structure is discussed. Ground-state intermediate band position and width due to electron discrete quantized energy level are obtained by solving impurity-related time-independent Schroddinger equation. Optical energy transitions are calculated for different structure sizes, impurity positions and electric field intensities. Taking account of the impurity usually neglected in such study, open-circuit voltage, current density and photovoltaic conversion efficiency are numerically calculated. From the obtained results, the optimal power conversion under the full concentration light is obtained for thin QW and it is strongly governed by both electric field and barrier size.