Asymptotic behavior of global smooth solutions to the full 1D hydrodynamic model for semiconductors

被引：23

作者：

Hsiao, L ^{[1
]}

Wang, S ^{[1
]}

机构：

[1] Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China

来源：

MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES | 2002年 / 12卷 / 06期

基金：

中国博士后科学基金;

关键词：

full hydrodynamic model; semiconductors; asymptotic behavior; global smooth solutions;

D O I：

10.1142/S0218202502001891

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

In this paper, we study the asymptotic behavior of smooth solutions to the initial boundary value problem for the full one-dimensional hydrodynamic model for semiconductors. We prove that the solution to the problem converges to the unique stationary solution time asymptotically exponentially fast.

引用

页码：777 / 796

页数：20

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