Comparison of dynamic properties of ground- and excited-state emission in p-doped InAs/GaAs quantum-dot lasers

被引：40

作者：

Arsenijevic, D. ^{[1
]}

Schliwa, A. ^{[1
]}

Schmeckebier, H. ^{[1
]}

Stubenrauch, M. ^{[1
]}

Spiegelberg, M. ^{[1
]}

Bimberg, D. ^{[1
]}

Mikhelashvili, V. ^{[2
,3
]}

Eisenstein, G. ^{[1
,2
,3
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

[3] Technion Israel Inst Technol, Russell Berrie Nanotechnol Inst, IL-32000 Haifa, Israel

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 18期

关键词：

LINEWIDTH ENHANCEMENT FACTOR; MODULATION CHARACTERISTICS; OPTICAL GAIN; HIGH-SPEED; TEMPERATURE; BANDWIDTH;

D O I：

10.1063/1.4875238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dynamic properties of ground-and excited-state emission in InAs/GaAs quantum-dot lasers operating close to 1.31 mu m are studied systematically. Under low bias conditions, such devices emit on the ground state, and switch to emission from the excited state under large drive currents. Modification of one facet reflectivity by deposition of a dichroic mirror yields emission at one of the two quantum-dot states under all bias conditions and enables to properly compare the dynamic properties of lasing from the two different initial states. The larger differential gain of the excited state, which follows from its larger degeneracy, as well as its somewhat smaller nonlinear gain compression results in largely improved modulation capabilities. We demonstrate maximum small-signal bandwidths of 10.51 GHz and 16.25 GHz for the ground and excited state, respectively, and correspondingly, large-signal digital modulation capabilities of 15 Gb/s and 22.5 Gb/s. For the excited state, the maximum error-free bit rate is 25 Gb/s. (C) 2014 AIP Publishing LLC.

引用

页数：4