Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors

被引：5

作者：

Ma Xiao-Hua ^{[1
,2
]}

Jiang Yuan-Qi ^{[1
,2
]}

Wang Xin-Hua ^{[3
]}

Lu Min ^{[1
,2
]}

Zhang Huo ^{[2
]}

Chen Wei-Wei ^{[1
,2
]}

Liu Xin-Yu ^{[3
]}

机构：

[1] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China

[2] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

[3] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China

来源：

CHINESE PHYSICS B | 2014年 / 23卷 / 01期

关键词：

AlGaN/GaN high electron mobility transistor; off-state stress; electron detrapping; degradation;

D O I：

10.1088/1674-1056/23/1/017303

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in AlGaN/GaN high electron mobility transistors (HEMTs) submitted to off-state stress. The threshold voltage shows a positive shift in the early stress, then turns to a negative shift. The negative shift of the threshold voltage seems to have a long recovery time. A model related with the balance of electron trapping and detrapping induced by shallow donors and deep acceptors is proposed to explain this degradation mode.

引用

页数：4

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