The Spatial Distribution of Threading Dislocations in Gallium Nitride Films

被引：46

作者：

Moram, Michelle A. ^{[1
]}

Oliver, Rachel A. ^{[1
]}

Kappers, Menno ^{[1
]}

Humphreys, Colin J. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 38-39期

基金：

英国工程与自然科学研究理事会;

关键词：

EPITAXIAL LATERAL OVERGROWTH; VAPOR-PHASE EPITAXY; THIN-FILMS; GAN; EFFICIENCY; REDUCTION; SAPPHIRE; GROWTH; POINT;

D O I：

10.1002/adma.200901095

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Spatial analysis techniques are used to study threading dislocations (TDs) at the surfaces of a wide range of GaN films. In all films, the dislocation positions are consistent with a spatially random TD generation process followed by movement of dislocations, but are inconsistent with the spatial distribution of dislocations expected at island coalescence boundaries.

引用

页码：3941 / +

页数：5

共 40 条

[11] Pattern formation and directional and spatial ordering of edge dislocations in bulk GaN: Microphotoluminescence spectra and continuum elastic calculations [J].

Gmeinwieser, Nikolaus ;

Schwarz, Ulrich T. .

PHYSICAL REVIEW B, 2007, 75 (24)

[12] Molecular dynamics simulation for evaluating melting point of wurtzite-type GaN crystal [J].

Harafuji, K ;

Tsuchiya, T ;

Kawamura, K .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (05) :2501-2512

[13] HIGH-EFFICIENCY ZN-DIFFUSED GAAS ELECTROLUMINESCENT DIODES [J].

HERZOG, AH ;

KEUNE, DL ;

CRAFORD, MG .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :600-&

[14] Epitaxial lateral overgrowth of off-basal GaN thin-film growth orientations [J].

Hollander, J. L. ;

Kappers, M. J. ;

Humphreys, C. J. .

PHYSICA B-CONDENSED MATTER, 2007, 401 :307-310

[15] WSXM:: A software for scanning probe microscopy and a tool for nanotechnology [J].

Horcas, I. ;

Fernandez, R. ;

Gomez-Rodriguez, J. M. ;

Colchero, J. ;

Gomez-Herrero, J. ;

Baro, A. M. .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2007, 78 (01)

[16]

Hull D., 2011, Introduction to Dislocations

[17] Defect reduction in (1122) semipolar GaN grown on m-plane sapphire using ScN interlayers [J].

Johnston, C. F. ;

Moram, M. A. ;

Kappers, M. J. ;

Humphreys, C. J. .

APPLIED PHYSICS LETTERS, 2009, 94 (16)

[18] Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire [J].

Johnston, C. F. ;

Kappers, M. J. ;

Moram, M. A. ;

Hollander, J. L. ;

Humphreys, C. J. .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (12) :3295-3299

[19] Defect reduction in non-polar (11(2)over-bar0) GaN grown on (1(1)over-bar02) sapphire [J].

Johnston, Carol F. ;

Kappers, Menno J. ;

Moram, Michelle A. ;

Hollander, Jonathan L. ;

Humphreys, Colin J. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (06) :1190-1193

[20]

Kamiyama S, 2002, PHYS STATUS SOLIDI A, V192, P296, DOI 10.1002/1521-396X(200208)192:2<296::AID-PSSA296>3.0.CO

← 1 2 3 4 →