The Spatial Distribution of Threading Dislocations in Gallium Nitride Films

被引：46

作者：

Moram, Michelle A. ^{[1
]}

Oliver, Rachel A. ^{[1
]}

Kappers, Menno ^{[1
]}

Humphreys, Colin J. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 38-39期

基金：

英国工程与自然科学研究理事会;

关键词：

EPITAXIAL LATERAL OVERGROWTH; VAPOR-PHASE EPITAXY; THIN-FILMS; GAN; EFFICIENCY; REDUCTION; SAPPHIRE; GROWTH; POINT;

D O I：

10.1002/adma.200901095

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Spatial analysis techniques are used to study threading dislocations (TDs) at the surfaces of a wide range of GaN films. In all films, the dislocation positions are consistent with a spatially random TD generation process followed by movement of dislocations, but are inconsistent with the spatial distribution of dislocations expected at island coalescence boundaries.

引用

页码：3941 / +

页数：5

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