INVESTIGATION OF PHOTOVOLTAIC PROPERTIES of p-InSe/n-CdS HETEROJUNCTION SOLAR CELLS

In this work, n-CdS/p-InSe heterojunction structures were fabricated by successive thermal evaporation of CdS and InSe powders. The photovoltaic properties of SnO2/n-CdS/p-InSe/Metal sandwich structures were investigated through I-V, C-V and spectral response measurements. Various metal point contacts such as Ag, Au, In, Al and C were deposited onto amorphous InSe films by thermal evaporation technique. The best photovoltaic behaviors were observed with Au and C contacts. Other metals showed ohmic current-voltage characteristics and poor photovoltaic responses. Solar cell parameters of the rectifying structures, SnO2/n-CdS/p-InSe/Au and SnO2/n-CdS/p-InSe/C under AM1 conditions were investigated. The open-circuit voltages and short-circuit currents were found to be around 400 mV and 10 mu A/cm(2), respectively. Device efficiencies were limited due to the high resistivity of InSe absorber layer.