Sericin for Resistance Switching Device with Multilevel Nonvolatile Memory

被引：226
作者：
Wang, Hong [1 ]
Meng, Fanben [1 ]
Cai, Yurong [2 ]
Zheng, Liyan [1 ]
Li, Yuangang [1 ]
Liu, Yuanjun [1 ]
Jiang, Yueyue [1 ]
Wang, Xiaotian [1 ]
Chen, Xiaodong [1 ]
机构：
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[2] Zhejiang Sci Tech Univ, Coll Mat & Text, Hangzhou 310018, Peoples R China
来源：
ADVANCED MATERIALS | 2013年 / 25卷 / 38期
基金：
新加坡国家研究基金会;
关键词：
resistance switching; protein; sericin; multilevel memory; electronic device; FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; ELECTRON-TRANSPORT; CHARGE INJECTION; PROTEIN; SILK; FILMS; NANOPARTICLES; INTERLAYERS; MOLECULE;
D O I：
10.1002/adma.201301983
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：5498 / 5503
页数：6
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