Sericin for Resistance Switching Device with Multilevel Nonvolatile Memory

被引：226
作者：
Wang, Hong [1 ]
Meng, Fanben [1 ]
Cai, Yurong [2 ]
Zheng, Liyan [1 ]
Li, Yuangang [1 ]
Liu, Yuanjun [1 ]
Jiang, Yueyue [1 ]
Wang, Xiaotian [1 ]
Chen, Xiaodong [1 ]
机构：
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[2] Zhejiang Sci Tech Univ, Coll Mat & Text, Hangzhou 310018, Peoples R China
来源：
ADVANCED MATERIALS | 2013年 / 25卷 / 38期
基金：
新加坡国家研究基金会;
关键词：
resistance switching; protein; sericin; multilevel memory; electronic device; FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; ELECTRON-TRANSPORT; CHARGE INJECTION; PROTEIN; SILK; FILMS; NANOPARTICLES; INTERLAYERS; MOLECULE;
D O I：
10.1002/adma.201301983
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：5498 / 5503
页数：6
相关论文
共 56 条
  • [1] Doping Human Serum Albumin with Retinoate Markedly Enhances Electron Transport across the Protein
    Amdursky, Nadav
    Pecht, Israel
    Sheves, Mordechai
    Cahen, David
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2012, 134 (44) : 18221 - 18224
  • [2] [Anonymous], 2010, P 2010 INT EL DEV M, DOI DOI 10.1109/IEDM.2010.5703392
  • [3] Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
    Balatti, S.
    Larentis, S.
    Gilmer, D. C.
    Ielmini, D.
    [J]. ADVANCED MATERIALS, 2013, 25 (10) : 1474 - 1478
  • [4] Silk fibroin microfluidic devices
    Bettinger, Christopher J.
    Cyr, Kathleen M.
    Matsumoto, Akira
    Langer, Robert
    Borenstein, Jeffrey T.
    Kaplan, David L.
    [J]. ADVANCED MATERIALS, 2007, 19 (19) : 2847 - +
  • [5] Regenerable Resistive Switching in Silicon Oxide Based Nanojunctions
    Cavallini, Massimiliano
    Hemmatian, Zahra
    Riminucci, Alberto
    Prezioso, Mirko
    Morandi, Vittorio
    Murgia, Mauro
    [J]. ADVANCED MATERIALS, 2012, 24 (09) : 1197 - 1201
  • [6] Resistive Switching and Magnetic Modulation in Cobalt-Doped ZnO
    Chen, Guang
    Song, Cheng
    Chen, Chao
    Gao, Shuang
    Zeng, Fei
    Pan, Feng
    [J]. ADVANCED MATERIALS, 2012, 24 (26) : 3515 - 3520
  • [7] Chen YS, 2012, NAT NANOTECHNOL, V7, P197, DOI [10.1038/nnano.2012.7, 10.1038/NNANO.2012.7]
  • [8] Novel Ultra-Low Power RRAM with Good Endurance and Retention
    Cheng, C. H.
    Chin, Albert
    Yeh, F. S.
    [J]. 2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2010, : 85 - +
  • [9] Programmable Bipolar and Unipolar Nonvolatile Memory Devices Based on Poly(2-(N-carbazolyl)ethyl methacrylate) End-Capped with Fullerene
    Hahm, Suk Gyu
    Kang, Nam-Goo
    Kwon, Wonsang
    Kim, Kyungtae
    Ko, Yong-Gi
    Ahn, Seonyoung
    Kang, Beom-Goo
    Chang, Taihyun
    Lee, Jae-Suk
    Ree, Moonhor
    [J]. ADVANCED MATERIALS, 2012, 24 (08) : 1062 - 1066
  • [10] A Natural Silk Fibroin Protein-Based Transparent Bio-Memristor
    Hota, Mrinal K.
    Bera, Milan K.
    Kundu, Banani
    Kundu, Subhas C.
    Maiti, Chinmay K.
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2012, 22 (21) : 4493 - 4499
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