Laser oscillation with low quantum defect in Yb:GdVO4, a crystal with high thermal conductivity

被引:55
作者
Petit, J
Viana, B
Goldner, P
Vivien, D
Louiseau, P
Ferrand, B
机构
[1] Ecole Natl Super Chim & Phys, Lab Chim Appl Etat Solide, F-75231 Paris 05, France
[2] CEA, Optoelect Lab Cristallog Appl, Serv Technol Composants, Dept Optron,Lab Elect Technol Informat, F-38054 Grenoble, France
关键词
D O I
10.1364/OL.29.000833
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A Yb:GdVO4 single crystal was grown by the Czoehralski process. Its thermal conductivity was measured by photothermal analysis and reached 8.1 and 7.1 W m(-1) K-1 along and perpendicular to the c axis, respectively. These values are in good agreement with the predicted ones. The optical spectroscopy of the crystal, such as its absorption and emission cross sections under the two polarizations, its fluorescence lifetime, and its laser parameters, is investigated. Cw laser oscillation is obtained for what is to our knowledge the first time in this material under titanium sapphire pumping at 984 nm. We obtain 420 mW of output power for a 2% output coupler at 1029 nm. With a thin sample, the laser wavelength decreases to 1015 nm. In this case the quantum defect is as small as 2.9%. The weak heat release of the material suggests good prospects for its use in high-power applications. (C) 2004 Optical Society of America.
引用
收藏
页码:833 / 835
页数:3
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