Spin transport and precession in graphene measured by nonlocal and three-terminal methods

被引：35
作者：
Dankert, Andre [1 ]
Kamalakar, Mutta Venkata [1 ]
Bergsten, Johan [1 ]
Dash, Saroj P. [1 ]
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 19期
关键词：
SILICON;
D O I：
10.1063/1.4876060
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate the spin transport and precession in graphene by using the Hanle effect in nonlocal and three-terminal measurement geometries. Identical spin lifetimes, spin diffusion lengths, and spin polarizations are observed in graphene devices for both techniques over a wide range of temperatures. The magnitude of the spin signals is well explained by spin transport models. These observations rules out any signal enhancements or additional scattering mechanisms at the interfaces for both geometries. This validates the applicability of both the measurement methods for graphene based spintronics devices and their reliable extractions of spin parameters. (C) 2014 AIP Publishing LLC.
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页数：4
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  • [1] Challenges for semiconductor spintronics
    Awschalom, David D.
    Flatte, Michael E.
    [J]. NATURE PHYSICS, 2007, 3 (03) : 153 - 159
  • [2] Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC
    Birkner, Bastian
    Pachniowski, Daniel
    Sandner, Andreas
    Ostler, Markus
    Seyller, Thomas
    Fabian, Jaroslav
    Ciorga, Mariusz
    Weiss, Dieter
    Eroms, Jonathan
    [J]. PHYSICAL REVIEW B, 2013, 87 (08):
  • [3] All-electrical spin injection and detection in the Co2FeSi/GaAs hybrid system in the local and non-local configuration
    Bruski, P.
    Manzke, Y.
    Farshchi, R.
    Brandt, O.
    Herfort, J.
    Ramsteiner, M.
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (05)
  • [4] Comparison of spin lifetimes in n-Ge characterized between three-terminal and four-terminal nonlocal Hanle measurements
    Chang, L-T
    Han, W.
    Zhou, Y.
    Tang, J.
    Fischer, I. A.
    Oehme, M.
    Schulze, J.
    Kawakami, R. K.
    Wang, K. L.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 28 (01)
  • [5] Intrinsic and extrinsic performance limits of graphene devices on SiO2
    Chen, Jian-Hao
    Jang, Chaun
    Xiao, Shudong
    Ishigami, Masa
    Fuhrer, Michael S.
    [J]. NATURE NANOTECHNOLOGY, 2008, 3 (04) : 206 - 209
  • [6] High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts
    Dankert, Andre
    Langouche, Lennart
    Kamalakar, Mutta Venkata
    Dash, Saroj Prasad
    [J]. ACS NANO, 2014, 8 (01) : 476 - 482
  • [7] Thermal creation of electron spin polarization in n-type silicon
    Dankert, Andre
    Dash, Saroj P.
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (24)
  • [8] Efficient Spin Injection into Silicon and the Role of the Schottky Barrier
    Dankert, Andre
    Dulal, Ravi S.
    Dash, Saroj P.
    [J]. SCIENTIFIC REPORTS, 2013, 3
  • [9] Electrical creation of spin polarization in silicon at room temperature
    Dash, Saroj P.
    Sharma, Sandeep
    Patel, Ram S.
    de Jong, Michel P.
    Jansen, Ron
    [J]. NATURE, 2009, 462 (7272) : 491 - 494
  • [10] Spin-based logic in semiconductors for reconfigurable large-scale circuits
    Dery, H.
    Dalal, P.
    Cywinski, L.
    Sham, L. J.
    [J]. NATURE, 2007, 447 (7144) : 573 - 576
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