Twin formation during the growth of InP on SrTiO3

被引：8

作者：

Cheng, J. ^{[1
]}

Largeau, L. ^{[2
]}

Patriarche, G. ^{[2
]}

Regreny, P. ^{[1
]}

Hollinger, G. ^{[1
]}

Saint-Girons, G. ^{[1
]}

机构：

[1] Univ Lyon, Ecole Cent Lyon, CNRS, INL,UMR5270, F-69134 Ecully, France

[2] CNRS, LPN, UPR20, F-91460 Ecully, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 23期

关键词：

crystallography; epitaxial growth; III-V semiconductors; indium compounds; semiconductor epitaxial layers; semiconductor growth; strontium compounds; surface energy; twinning; ROOM-TEMPERATURE; GAAS; SI; SILICON; LASERS;

D O I：

10.1063/1.3151826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The epitaxial growth of InP on (001)-oriented SrTiO3 (STO) is analyzed, and evidence is shown of the formation of twins during the early stages of the growth. A detailed crystallographic description of these twins is presented, and the origin of their formation is discussed. The elevated interface energy characteristic of the InP/STO system, combined with the initial three-dimensional growth of the semiconductor and with the existence of a commensurate heterointerface between STO and the twinned InP variant are identified as the main causes of twin formation during the growth of this highly heterogeneous epitaxial system.

引用

页数：3

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