Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature

被引：54

作者：

Ahn, Byung Du ^{[1
]}

Park, Jin-Seong ^{[2
]}

Chung, K. B. ^{[3
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[2] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea

[3] Dongguk Univ, Div Phys & Semicond Sci, Seoul 100715, South Korea

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 16期

基金：

新加坡国家研究基金会;

关键词：

DISPLAY; OXIDE;

D O I：

10.1063/1.4899144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Device performance of InGaZnO (IGZO) thin film transistors (TFTs) are investigated as a function of hydrogen ion irradiation dose at room temperature. Field effect mobility is enhanced, and subthreshold gate swing is improved with the increase of hydrogen ion irradiation dose, and there is no thermal annealing. The electrical device performance is correlated with the electronic structure of IGZO films, such as chemical bonding states, features of the conduction band, and band edge states below the conduction band. The decrease of oxygen deficient bonding and the changes in electronic structure of the conduction band leads to the improvement of device performance in IGZO TFT with an increase of the hydrogen ion irradiation dose. (C) 2014 AIP Publishing LLC.

引用

页数：5

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