Properties of Shottky contacts of aluminum on strained Si1-x-yGexCy layers

被引：7
|
作者：
Mi, J
Gupta, A
Yang, CY
Zhu, JT
Yu, PKL
Warren, P
Dutoit, M
机构：
[1] UNIV CALIF SAN DIEGO, DEPT ELECT & COMP ENGN, LA JOLLA, CA 92093 USA
[2] SWISS FED INST TECHNOL, INST MICRO & OPTOELECT, CH-1015 LAUSANNE, SWITZERLAND
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 24期
关键词：
D O I：
10.1063/1.117208
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Schottky contacts of Al/Si1-x-yGexCy were fabricated using conventional Si technology, Effects of thermal processing of the alloys on the electrical properties of the Al/Si1-x-yGexCy Schottky diodes were investigated. Current-voltage (I-V), capacitance-voltage (C-V), and x-ray diffraction measurements were performed. These thick alloy films (100-150 nm) experienced strain relaxation upon annealing at 700 degrees C. Nearly ideal I-V and C-V behaviors were obtained for strain-compensated samples. I-V and C-V characteristics show evidence of dislocation-related traps for strain-relaxed samples. Carbon incorporation improves the I-V and C-V characteristics by lessening the extent of lattice relaxation due to thermal processing. (C) 1996 American Institute of Physics.
引用
收藏
页码：3743 / 3745
页数：3
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