A proposal of epitaxial oxide thin film structures for future oxide electronics

New epitaxial oxide thin film structures are proposed for future oxide electronics, particularly for ferroelectric random access memory (FeRAM) with oxide electrodes drawing on silicon-on-insulator (SOI) and high-T-c superconductor technology. These structures have a benefical effect in device scaling and ferroelectric size effect and can be a starting point for future oxide electronics, such as high-T-c superconducting, ferroelectric, piezoelectric and optical devices. In addition, several candidates for electrodes are discussed, considering the recent research on conductive perovskite, including high-T-c superconductors. The basic thin film structure is epitaxially grown Ferroelectric/ABO(3)/CeO2 or MgAl2O4/Si. As ideal structures, we propose four kinds of thin film structures based on a-axis oriented Bi layer-structured ferroelectric thin film and ferroelectric artificial superlattice and an idea for a superconductor-normal metal-superconductor (SNS) device with conductive perovskite superlattice. Besides FeRAM, these oxide multilayers fabricated on Si can be also applied to high-T-c superconducting devices, optoelectronic devices, infrared (IR) pyre-sensors and surface acoustic wave (SAW) devices.