共 50 条
Light triggered formation of photo-responsive epoxy based networks
被引:21
|作者:
Radl, Simone
[1
]
Roppolo, Ignazio
[2
]
Poelzl, Karina
[1
]
Ast, Markus
[1
]
Spreitz, Josef
[3
]
Griesser, Thomas
[4
,5
]
Kern, Wolfgang
[1
,4
]
Schloegl, Sandra
[1
]
Sangermano, Marco
[6
]
机构:
[1] Polymer Competence Ctr Leoben GmbH, Roseggerstr 12, A-8700 Leoben, Austria
[2] Ist Italiano Tecnol, Ctr Sustainable Futures, Corso Trento 21, I-10129 Turin, Italy
[3] Aglycon Dr Spreitz KG, Europapk 1, A-8412 Allerheiligen Bei Wildon, Austria
[4] Univ Leoben, Chair Chem Polymer Mat, Otto Glockel Str 2, A-8700 Leoben, Austria
[5] Christian Doppler Lab Funct & Polymer Based Ink J, Otto Glockel Str 2, A-8700 Leoben, Austria
[6] Politecn Torino, Dept Appl Sci & Technol, Corso Duca Abruzzi 24, I-10129 Turin, Italy
来源:
关键词:
Cationic curing;
Epoxy networks;
Photocleavage;
PHOTOREMOVABLE PROTECTING GROUPS;
CATIONIC-POLYMERIZATION;
REACTION-MECHANISMS;
PHOTOPOLYMERIZATION;
PHOTOCHEMISTRY;
THERAPEUTICS;
LITHOGRAPHY;
INITIATORS;
CHEMISTRY;
HYDROGELS;
D O I:
10.1016/j.polymer.2016.12.070
中图分类号:
O63 [高分子化学(高聚物)];
学科分类号:
070305 ;
080501 ;
081704 ;
摘要:
Taking advantage of versatile o-nitrobenzyl chemistry, the present study highlights the design of photocurable epoxy networks that undergo spatially controlled bond cleavage in response to DV irradiation. The synthetic strategy involves the preparation of epoxy monomers with photolabile o-nitrobenzyl ester (o-NBE) links that are cured via photoinduced cationic ring opening reaction. Two different photo initiation systems are employed which do not interfere with the absorbance of the o-NBE groups. The first initiation mechanism exploits the direct photolysis of N-hydroxynaphthalimide triflate upon deep UV exposure and the second mechanism follows a free radical promoted cationic polymerization upon visible light illumination. The crosslinking and cleavage kinetics of the photodegradable epoxy networks are characterized by spectroscopic techniques. In thin films, the UV induced increase in solubility is confirmed by sol-gel analysis and used for the fabrication of positive tone photoresists. Patterned films are obtained by photolithographic processes and microscopic analyses reveal that the resists provide a resolution of 4 pm and a good contrast behavior. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:349 / 357
页数:9
相关论文