HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations

被引：2
作者：
Isshiki, Toshiyuki [1 ]
Nishio, Koji [1 ]
Abe, Yoshihisa [2 ]
Komiyama, Jun [2 ]
Suzuki, Shunichi [2 ]
Nakanishi, Hideo [2 ]
机构：
[1] Kyoto Inst Technol, Sakyo Ku, Kyoto 6068585, Japan
[2] Covalent Mat Corp, Hadano, Kanagawa 2578566, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷
关键词：
AlN; SiC buffer layer; Interface structure; High-resolution TEM investigation; CHEMICAL-VAPOR-DEPOSITION;
D O I：
10.4028/www.scientific.net/MSF.600-603.1317
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Epitaxial growth of AlN was carried out by MOVPE method on SiC/Si buffered substrates prepared by using various Si surfaces of (110), (211) and (001). Cross-sectional HRTEM analyses of the interfaces between SiC buffer layer and AlN epitaxial layer disclosed characteristic nanostructures related growth mechanism on the each substrate. In the case of Si(110) and Si(211) substrate, hexagonal AlN grew directly on SiC(111) plane with AlN(0001) plane parallel to it. In contrast, growth on Si(001) substrate gave complicate structure at AlN/SiC interface. Hexagonal AlN didn't grow directly but cubic AlN appeared with a pyramidal shape on SiC(001). When the cubic AlN grew 10nm in height, structure of growing AlN crystal changed to hexagonal type on the pyramidal {111} planes of cubic AlN.
引用
收藏
页码：1317 / +
页数：2
相关论文
共 49 条
[41]   Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology [J].
Bantaculo, Rolando ;
Saitoh, Eiji ;
Miyamoto, Yu ;
Handa, Hiroyuki ;
Suemitsu, Maki .
THIN SOLID FILMS, 2011, 520 (02) :730-733
[42]   Epitaxial growth and magnetic properties of ferromagnetic Fe3N on Si(111) by molecular beam epitaxy using AlN/3C-SiC intermediate layers [J].
Yamaguchi, Kimiaki ;
Yui, Tatsuya ;
Ichikawa, Yoshitake ;
Yamaki, Kazuhiro ;
Kakeya, Itsuhiro ;
Kadowaki, Kazuo ;
Suemasu, Takashi .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (24-28) :L705-L707
[43]   Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC [J].
Portail, M. ;
Michon, A. ;
Vezian, S. ;
Lefebvre, D. ;
Chenot, S. ;
Roudon, E. ;
Zielinski, M. ;
Chassagne, T. ;
Tiberj, A. ;
Camassel, J. ;
Cordier, Y. .
JOURNAL OF CRYSTAL GROWTH, 2012, 349 (01) :27-35
[44]   Singularities of the Thin AlN Layers Formation by Molecular Beam Epitaxy On 3C-SiC/Si(111) Templates with On-Axis and 4° Off-Axis Disorientation [J].
Babaev, A. V. ;
Nevolin, V. K. ;
Statsenko, V. N. ;
Fedotov, S. D. ;
Tsarik, K. A. .
MECHANICS OF SOLIDS, 2020, 55 (01) :84-89
[45]   Singularities of the Thin AlN Layers Formation by Molecular Beam Epitaxy On 3C-SiC/Si(111) Templates with On-Axis and 4° Off-Axis Disorientation [J].
A. V. Babaev ;
V. K. Nevolin ;
V. N. Statsenko ;
S. D. Fedotov ;
K. A. Tsarik .
Mechanics of Solids, 2020, 55 :84-89
[46]   Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps [J].
Okumura, Hironori ;
Kimoto, Tsunenobu ;
Suda, Jun .
APPLIED PHYSICS LETTERS, 2014, 105 (07)
[47]   Metal-organic chemical vapor deposition growth of GaN thin film on 3C-SiC/Si(111) substrate using various buffer layers [J].
Park, CI ;
Kang, JH ;
Kim, KC ;
Nahm, KS ;
Suh, EK ;
Lim, KY .
THIN SOLID FILMS, 2001, 401 (1-2) :60-66
[48]   Structural and morphological properties of Ga(Al)N grown by MBE on 3C-SiC/Si (111) templates with off-axis and on-axis substrate orientation [J].
Tsarik, K. A. ;
Fedotov, S. D. ;
Nevolin, V. K. ;
Statsenko, V. N. .
INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2018, 2019, 11022
[49]   Epitaxial growth of 3C-SiC by low-pressure chemical vapor deposition on a surface-structure-controlled molecular beam epitaxy layer [J].
Uchida, M ;
Kitabatake, M .
THIN SOLID FILMS, 1998, 335 (1-2) :32-36
12345