Influence of surface and grain-boundary scattering on the resistivity of copper in reduced dimensions

被引：207

作者：

Wu, W

Brongersma, SH

Van Hove, M

Maex, K

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, EE Dept, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 15期

关键词：

D O I：

10.1063/1.1703844

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examine the influence of surface and grain-boundary scattering on the total electrical resistivity of copper as dimensions are reduced close to the bulk electron mean free path (39 nm). Through resistivity and grain size characterization on copper wires with sizes down to 95x130 nm(2) in a temperature range of 4.2 to 293 K, it was found that the influence of surface scattering is less than previously speculated, while grain-boundary scattering is dominant. A reduction of the background scattering length due to small grains accounts for the observed behavior. The reflection coefficient varies as expected from impurity enrichment in the grain boundaries. (C) 2004 American Institute of Physics.

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页码：2838 / 2840

页数：3

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