Non-linear piezoelectricity in wurtzite ZnO semiconductors

被引:39
作者
Al-Zahrani, H. Y. S. [1 ]
Pal, J. [1 ]
Migliorato, M. A. [1 ]
机构
[1] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England
基金
英国工程与自然科学研究理事会;
关键词
Zinc oxide; Nanowires; Piezoelectricity; Semiconductor device modeling; POLARIZATION;
D O I
10.1016/j.nanoen.2013.05.005
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this work we explore the strain dependence of the piezoelectric effect in wurtzite ZnO crystals. We write the polarization in terms of the internal anion-cation displacement, the ionic and dipole charges and use ab initio Density Functional Theory to evaluate the dependence of all quantities on the strain tensor. We determine that similar to III-V semiconductors the piezoelectric effect is nonlinear in the strain tensor. We report the quadratic piezoelectric coefficients and a revised value of the spontaneous polarization. We find that in ZnO nanowires, the non-linear piezoelectric effect leads to predictions in some cases opposite to those obtained using the widely used linear model. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1214 / 1217
页数:4
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