Photoresist removal using atomic hydrogen generated by heated catalyzer

被引：75

作者：

Izumi, A ^{[1
]}

Matsumura, H ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol, Ishikawa 9231292, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 7A期

关键词：

photoresist removal; atomic hydrogen; catalyzer; plasma free; ion-implantation;

D O I：

10.1143/JJAP.41.4639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, a novel method for high-dose ion-implanted photoresist removal using atomic hydrogen generated by a heated tungsten catalyzer is proposed. It is found that photoresist doped as high as 1 X 10(15) cm(-2) can be removed completely. Quadruple mass spectroscopy detected hydrocarbon fragments during the atomic hydrogen treatment.

引用

收藏

页码：4639 / 4641

页数：3

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