Fabrication of Mo/Si multilayer for EUVL reticle blank by ion beam sputtering

被引：6
作者：
Yamanashi, H [1 ]
Ogawa, T [1 ]
Hoko, H [1 ]
Lee, BT [1 ]
Hoshino, E [1 ]
Takahashi, M [1 ]
Yoneda, T [1 ]
Okazaki, S [1 ]
机构：
[1] Assoc Super Adv Elect Technol, EUV Lab, NTT Atsugi R&D Ctr, Atsugi, Kanagawa 2430198, Japan
来源：
EMERGING LITHOGRAPHIC TECHNOLOGIES VI, PTS 1 AND 2 | 2002年 / 4688卷
关键词：
EUV lithography; reticle; mask; multilayer; molybdenum/silicon (Mo/Si); reflectivity; defect; ion beam sputtering (IBS);
D O I：
10.1117/12.472345
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Multilayer deposition is one of the key technologies for the fabrication of reticle blanks for extreme ultraviolet lithography (EUVL). Molybdenum/silicon (Mo/Si) multilayers deposited on mask blanks must have a high reflectance and a low defect density. To achieve this, ASET has developed a deposition system that employs ion beam sputtering (IBS). This paper presents some preliminary experimental results, such as the EUV reflectance and defect density of Mo/Si multilayers deposited with this system.
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收藏
页码：710 / 715
页数：4
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