Microstructure and Ferroelectric Properties of Direct-Patternable Bi3.25La0.75Ti3O12 Films Prepared by Photochemical Metal-Organic Deposition
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Park, Hyeong-Ho
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Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South KoreaYonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
Park, Hyeong-Ho
[1
]
Kim, Hyuncheol
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Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South KoreaYonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
Kim, Hyuncheol
[1
]
Wang, Seok-Joo
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Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South KoreaYonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
Wang, Seok-Joo
[1
]
Park, Hyung-Ho
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Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South KoreaYonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
Park, Hyung-Ho
[1
]
Kim, Tae Song
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Korea Inst Sci & Technol, Microsyst Res Ctr, Seoul 136791, South KoreaYonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
Kim, Tae Song
[2
]
Hill, Ross H.
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Simon Fraser Univ, Labs 4D, Burnaby, BC V5A 1S6, Canada
Simon Fraser Univ, Dept Chem, Burnaby, BC V5A 1S6, CanadaYonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
Hill, Ross H.
[3
,4
]
机构:
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[2] Korea Inst Sci & Technol, Microsyst Res Ctr, Seoul 136791, South Korea
[3] Simon Fraser Univ, Labs 4D, Burnaby, BC V5A 1S6, Canada
[4] Simon Fraser Univ, Dept Chem, Burnaby, BC V5A 1S6, Canada
The microstructure and ferroelectric properties of Bi3.25La0.75Ti3O12 films prepared by photochemical metal-organic deposition using photosensitive precursors were characterized. The diffraction intensities showed a distribution similar to Bi3.25La0.75Ti3O12 ceramics, and Pt(111) was found to not influence the growth orientation of Bi3.25La0.75Ti3O12 films. The values of measured remnant polarization and dielectric constant of Bi3.25La0.75Ti3O12 films annealed at 650 and 700 degrees C were 8.7, 16.0 mu C/cm(2) and 172, 276, respectively. The films remained free of fatigue up to 10(9) switching cycles. These results suggest the possible application of ferroelectric Bi3.25La0.75Ti3O12 film, relatively easily and without high cost process such as dry etching.
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
Li, Jia
Yoshitake, Michiko
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Natl Inst Mat Sci, Tsukuba, Ibaraki, JapanChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
Yoshitake, Michiko
Song, Weijie
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
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Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268503, JapanTokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268503, Japan
Singh, S. K.
Ishiwara, H.
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Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268503, JapanTokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268503, Japan
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Yonsei Univ, Dept Ceram Engn, Seoul 120749, South KoreaYonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea
Park, Hyeong-Ho
Lee, Hong-Sub
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Yonsei Univ, Dept Ceram Engn, Seoul 120749, South KoreaYonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea
Lee, Hong-Sub
Park, Hyung-Ho
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Yonsei Univ, Dept Ceram Engn, Seoul 120749, South KoreaYonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea
Park, Hyung-Ho
Hill, Ross H.
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Simon Fraser Univ, Dept Chem, Burnaby, BC V5A 1S6, Canada
Simon Fraser Univ, Labs 4D, Burnaby, BC V5A 1S6, CanadaYonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea
Hill, Ross H.
Hwang, Yun Taek
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Hynix Semicond Inc, Res & Semicond Div, Icheon Si 467701, Kyoungki Do, South KoreaYonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea
机构:
Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Yang, B. B.
Guo, M. Y.
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Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Frontier Inst Sci & Technol, Xian 710049, Shaanxi, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Guo, M. Y.
Song, D. P.
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Song, D. P.
Tang, X. W.
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Tang, X. W.
Wei, R. H.
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Wei, R. H.
Hu, L.
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Hu, L.
Yang, J.
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Yang, J.
Song, W. H.
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Song, W. H.
Dai, J. M.
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Dai, J. M.
Lou, X. J.
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Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Frontier Inst Sci & Technol, Xian 710049, Shaanxi, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
机构:
E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Zhang, J. Z.
Han, M. J.
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Han, M. J.
Li, Y. W.
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Li, Y. W.
Hu, Z. G.
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Hu, Z. G.
Chu, J. H.
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China