Hall effect measurements on ion bombarded YBaCuO films

High quality c-axis oriented YBaCuO films, epitaxially grown on (100) SrTiO3 substrates, were photolithographically patterned to allow Hall measurements at different temperatures 4K less than or equal to T less than or equal to 300K in magnetic fields up to B less than or equal to 5 T aligned parallel to the surface normal. In this way, the temperature and field dependence of the longitudinal rho(xx)(B,T) and transverse resistivity rho(xy)(B,T)] were determined before and after irradiation with 350 keV He+ ions. The resulting changes of the temperature dependence of the longitudinal resistivity, Hall resistivity and inverse Hall angle are reported.