Influence of oxygen and argon flow on properties of aluminum-doped zinc oxide thin films prepared by magnetron sputtering

被引：12
作者：
Zhu, Hua [1 ]
Wang, Hemei [1 ]
Wan, Wenqiong [2 ]
Yu, Shijin [1 ]
Feng, XiaoWei [2 ]
机构：
[1] Jingdezhen Ceram Inst, Dept Mech & Elect Engn, Jingdezhen 333001, Jiangxi, Peoples R China
[2] Technol & Arts Jingdezhen Ceram Inst, Jingdezhen 333001, Jiangxi, Peoples R China
来源：
THIN SOLID FILMS | 2014年 / 566卷
关键词：
Aluminum-doped zinc oxide; X-ray diffraction; Oxygen/argon flow ratio; Magnetron sputtering; Transmittance; Resistivity; ZNO FILMS; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; AL; TEMPERATURE; CO; THICKNESSES; TRANSPARENT; RELAXATION; PRESSURE;
D O I：
10.1016/j.tsf.2014.07.021
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, the influence of the oxygen/argon (O-2/Ar) flow ratio on aluminum-doped zinc oxide (ZAO) films using a Zn1.22Al0.02O1.25 target was investigated systematically. Different samples were obtained by changing the O-2/Ar flow ratio from 0.11 to 3. The grain size first decreased and then increased as the O-2/Ar flow ratio increased, reaching a minimum size of 8.53 nm at a flow ratio of 1. All films showed different average transmittances above 400 nm because of different surface structures and film thicknesses; the thickness of films varied from 261 to 897 nm. Moreover, the ZAO films exhibited different optical bandgaps between 3.22 eV and 3.31 eV. The resistivity first increased from 2.1 x 10(-4) Omega cm to 350 x 10(-4) Omega cm and then decreased to 220 x 10(-4) Omega cm with increasing O-2/Ar flow ratio. Both the carrier concentration and Hall mobility first decreased from 5.6 x 10(20) cm(-3) to 0.3 x 10(20) cm(-3) and from 3.9 cm(2)/Vs to 0.6 cm(2)/Vs, respectively, and then increased to 0.9 x 10(20) cm(-3) and 1.1 cm(2)/Vs, respectively, with increasing O-2/Ar flow ratio. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：32 / 37
页数：6
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