Investigation of optical properties of amorphous Ge15Se85-xCux thin films using spectroscopic ellipsometry

被引:12
|
作者
Shaaban, E. R. [1 ]
Emam-Ismail, M. [2 ]
Abbady, Gh. [3 ]
Prakash, Deo [4 ]
El-Hagary, M. [5 ]
Afify, N. [3 ]
Verma, K. D. [6 ]
机构
[1] Al Azhar Univ, Dept Phys, Fac Sci, Assiut 71542, Egypt
[2] Ain Shams Univ, Fac Sci, Dept Phys, Cairo 11566, Egypt
[3] Assiut Univ, Dept Phys, Fac Sci, Assiut 71516, Egypt
[4] SMVD Univ, Fac Engn, Sch Comp Sci & Engn, Katra 182320, Jammu & Kashmir, India
[5] Helwan Univ, Fac Sci, Dept Phys, Cairo 11792, Egypt
[6] SV Coll, Dept Phys, Mat Sci Res Lab, Aligarh 202001, Uttar Pradesh, India
关键词
Ge15Se85-xCux thin film; Spectroscopic ellipsometry; Band gap; Transmittance spectra; Cohesive energy; WAVE-GUIDES; MICROSTRUCTURE; TRANSMITTANCE; SPECTRA; GLASS;
D O I
10.1016/j.solidstatesciences.2015.12.015
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Different compositions of amorphous Ge15Se85-xCux thin films were deposited onto glass substrates by the thermal evaporation technique. Their amorphous structural characteristics were studied by X-ray diffraction (XRD). The optical constants (n, k) of amorphous Ge15Se85-xCux thin films were obtained by fitting the ellipsometric parameters (psi and Delta) data for the first time using three layers model system in the wavelength range 300-1100 nm. It was found that the refractive index, n, increases with the increase of Cu content. The possible optical transition in these films is found to be indirect transitions. The optical energy gap decreases linearly from 1.83 to 1.44 eV with increasing the Cu. The experimental transmittances spectrum can be simulated using the thickness and optical constants modeled by spectroscopic ellipsometry model. (C) 2015 Elsevier Masson SAS. All rights reserved.
引用
收藏
页码:65 / 71
页数:7
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