Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

被引：5
|
作者：
Luo, B
Kim, J
Mehandru, R
Ren, F [1 ]
Lee, KP
Pearton, SJ
Polyakov, AY
Smirnov, NB
Govorkov, AV
Kozhukhova, EA
Osinsky, AV
Norris, PE
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] Inst Rare Met, Moscow 109017, Russia
[4] Corning Appl Technol, Woburn, MA 01801 USA
来源：
SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 09期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1016/S0038-1101(02)00066-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaN/SiC and Al0.5Ga0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the GaN and AlGaN. Annealing at 850 degreesC for 20 s (GaN) or 120 s (AlGaN) was required for achieving specific contact resistances in the 10(-6) Omega cm(2) range. The reverse breakdown voltage showed a negative temperature coefficient in both types of sample. with value similar to5.5 +/- 2.5 x 10(-3) V/K. The I-V characteristics of both heterojunctions show evidence of tunneling via defect states. (C) 2002 Published by Elsevier Science Ltd.
引用
收藏
页码：1345 / 1349
页数：5
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