Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

被引：5
|
作者：
Luo, B
Kim, J
Mehandru, R
Ren, F [1 ]
Lee, KP
Pearton, SJ
Polyakov, AY
Smirnov, NB
Govorkov, AV
Kozhukhova, EA
Osinsky, AV
Norris, PE
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] Inst Rare Met, Moscow 109017, Russia
[4] Corning Appl Technol, Woburn, MA 01801 USA
来源：
SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 09期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1016/S0038-1101(02)00066-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaN/SiC and Al0.5Ga0.75 N/SiC heterojunction diodes were fabricated using Al/Ti for p-ohmic contact to the SiC and Ti/Al/Pt/Au for n-ohmic contact to the GaN and AlGaN. Annealing at 850 degreesC for 20 s (GaN) or 120 s (AlGaN) was required for achieving specific contact resistances in the 10(-6) Omega cm(2) range. The reverse breakdown voltage showed a negative temperature coefficient in both types of sample. with value similar to5.5 +/- 2.5 x 10(-3) V/K. The I-V characteristics of both heterojunctions show evidence of tunneling via defect states. (C) 2002 Published by Elsevier Science Ltd.
引用
收藏
页码：1345 / 1349
页数：5
相关论文
共 50 条
  • [21] Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures
    Shtepliuk, I.
    Khranovskyy, V.
    Lashkarev, G.
    Khomyak, V.
    Lazorenko, V.
    Ievtushenko, A.
    Syvajarvi, M.
    Jokubavicius, V.
    Yakimova, R.
    SOLID-STATE ELECTRONICS, 2013, 81 : 72 - 77
  • [22] Investigation of the Epitaxial Graphene/p-SiC Heterojunction
    Anderson, T. J.
    Hobart, K. D.
    Nyakiti, L. O.
    Wheeler, V. D.
    Myers-Ward, R. L.
    Caldwell, J. D.
    Bezares, F. J.
    Jernigan, G. G.
    Tadjer, M. J.
    Imhoff, E. A.
    Koehler, A. D.
    Gaskill, D. K.
    Eddy, C. R., Jr.
    Kub, F. J.
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (11) : 1610 - 1612
  • [23] Photovoltaic effect in p-SiC/p-Si heterojunction
    Kozlovskyi, A. A.
    Semenov, A., V
    Puzikov, V. M.
    FUNCTIONAL MATERIALS, 2013, 20 (02): : 217 - 220
  • [24] Graphene in ohmic contact for both n-GaN and p-GaN
    Zhong, Haijian
    Liu, Zhenghui
    Shi, Lin
    Xu, Gengzhao
    Fan, Yingmin
    Huang, Zengli
    Wang, Jianfeng
    Ren, Guoqiang
    Xu, Ke
    APPLIED PHYSICS LETTERS, 2014, 104 (21)
  • [25] Carrier transport mechanisms of p-SiC/n-Si hetero-junctions
    Su, Jianfeng
    Niu, Qiang
    Zhang, Dongmei
    Zhang, Yongsheng
    Fu, Zhuxi
    SOLID STATE SCIENCES, 2011, 13 (02) : 434 - 437
  • [26] Fabrication and characterization of n-ZnO on p-SiC heterojunction diodes on 4H-SiC substrates
    El-Shaer, A.
    Bakin, A.
    Schlenker, E.
    Mofor, A. C.
    Wagner, G.
    Reshanov, S. A.
    Waag, A.
    SUPERLATTICES AND MICROSTRUCTURES, 2007, 42 (1-6) : 387 - 391
  • [27] Improvement in the Electrical Properties in n-ZTO/p-SiC Heterojunction Structures via Post-Annealing
    Park, Sung-Joon
    Jeong, Young-Seok
    Koo, Sang-Mo
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2017, 17 (10) : 7250 - 7253
  • [28] Solar-blind p-GaN/i-AlGaN/n-AlGaN ultraviolet photodiodes on SiC substrate
    Parish, G
    Hansen, M
    Moran, B
    Keller, S
    DenBaars, SP
    Mishra, UK
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (01): : 297 - 300
  • [29] Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers
    V. V. Kozlovski
    A. E. Vasil’ev
    P. A. Karaseov
    A. A. Lebedev
    Semiconductors, 2018, 52 : 310 - 315
  • [30] Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers
    Kozlovski, V. V.
    Vasil'ev, A. E.
    Karaseov, P. A.
    Lebedev, A. A.
    SEMICONDUCTORS, 2018, 52 (03) : 310 - 315
12345