Self-organized quantum wires and dots in III-V semiconductors

被引：35
作者：
Asahi, H
机构：
[1] Inst. of Sci. and Indust. Research, Osaka University, Ibaraki, Osaka 567, 8-1, Mihogaoka
来源：
ADVANCED MATERIALS | 1997年 / 9卷 / 13期
关键词：
D O I：
10.1002/adma.19970091305
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Review: The fabrication of quantum wires and quantum dots in III-V semiconductors using self-organization phenomena is reviewed. The Stranski-Krastanov (S-K) mode growth, step-bunching, and strain-induced lateral composition modulation techniques are covered. The Figure shows the vertical stacking of islands that are formed by the alternate S-K mode growth of five cycles of an In(Ga) quantum dot layer and a GaAs spacer layer.
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页码：1019 / +
页数：1
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共 43 条
[11]   NEW GAAS QUANTUM WIRES ON (111)B FACETS BY SELECTIVE MOCVD [J].
FUKUI, T ;
ANDO, S .
ELECTRONICS LETTERS, 1989, 25 (06) :410-412
[12]   GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J].
GOLDSTEIN, L ;
GLAS, F ;
MARZIN, JY ;
CHARASSE, MN ;
LEROUX, G .
APPLIED PHYSICS LETTERS, 1985, 47 (10) :1099-1101
[13]   OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS [J].
GOMYO, A ;
SUZUKI, T ;
IIJIMA, S .
PHYSICAL REVIEW LETTERS, 1988, 60 (25) :2645-2648
[14]   QUANTUM-WELL WIRE FABRICATION METHOD USING SELF-ORGANIZED MULTIATOMIC STEPS ON VICINAL (001)GAAS SURFACES BY METALORGANIC VAPOR-PHASE EPITAXY [J].
HARA, S ;
MOTOHISA, J ;
FUKUI, T ;
HASEGAWA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8B) :4401-4404
[15]   FORMATION OF QUANTUM-WELL WIRE-LIKE STRUCTURES BY MBE GROWTH OF ALGAAS/GAAS SUPERLATTICES ON GAAS (110) SURFACES [J].
HASEGAWA, S ;
SATO, M ;
MAEHASHI, K ;
ASAHI, H ;
NAKASHIMA, H .
JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :371-375
[16]   COMPOSITIONAL DISORDERING OF GAAS-ALXGA1-XAS SUPERLATTICE BY GA FOCUSED ION-BEAM IMPLANTATION AND ITS APPLICATION TO SUB-MICRON STRUCTURE FABRICATION [J].
HIRAYAMA, Y ;
SUZUKI, Y ;
TARUCHA, S ;
OKAMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (07) :L516-L518
[17]   Simulation and observation of the step bunching process grown on GaAs(001) vicinal surface by metalorganic vapor phase epitaxy [J].
Ishizaki, J ;
Ohkuri, K ;
Fukui, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :1280-1284
[18]   Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy [J].
Jeppesen, S ;
Miller, MS ;
Hessman, D ;
Kowalski, B ;
Maximov, I ;
Samuelson, L .
APPLIED PHYSICS LETTERS, 1996, 68 (16) :2228-2230
[19]   STIMULATED-EMISSION IN SEMICONDUCTOR QUANTUM WIRE HETEROSTRUCTURES [J].
KAPON, E ;
HWANG, DM ;
BHAT, R .
PHYSICAL REVIEW LETTERS, 1989, 63 (04) :430-433
[20]   MULTIATOMIC STEPS ON METALORGANIC CHEMICAL VAPOR DEPOSITION-GROWN GAAS VICINAL SURFACES STUDIED BY ATOMIC FORCE MICROSCOPY [J].
KASU, M ;
FUKUI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (7A) :L864-L866
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