Self-organized quantum wires and dots in III-V semiconductors

被引：35
作者：
Asahi, H
机构：
[1] Inst. of Sci. and Indust. Research, Osaka University, Ibaraki, Osaka 567, 8-1, Mihogaoka
来源：
ADVANCED MATERIALS | 1997年 / 9卷 / 13期
关键词：
D O I：
10.1002/adma.19970091305
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Review: The fabrication of quantum wires and quantum dots in III-V semiconductors using self-organization phenomena is reviewed. The Stranski-Krastanov (S-K) mode growth, step-bunching, and strain-induced lateral composition modulation techniques are covered. The Figure shows the vertical stacking of islands that are formed by the alternate S-K mode growth of five cycles of an In(Ga) quantum dot layer and a GaAs spacer layer.
引用
收藏
页码：1019 / +
页数：1
相关论文
共 43 条
[1]   SELECTIVE GROWTH OF INGAAS ON NANOSCALE INP ISLANDS [J].
AHOPELTO, J ;
LIPSANEN, H ;
SOPANEN, M ;
KOLJONEN, T ;
NIEMI, HEM .
APPLIED PHYSICS LETTERS, 1994, 65 (13) :1662-1664
[2]   NANOSCALE INP ISLANDS FOR QUANTUM BOX STRUCTURES BY HYDRIDE VAPOR-PHASE EPITAXY [J].
AHOPELTO, J ;
YAMAGUCHI, AA ;
NISHI, K ;
USUI, A ;
SAKAKI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (1A-B) :L32-L35
[3]   MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].
ARAKAWA, Y ;
SAKAKI, H .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941
[4]   GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J].
ASADA, M ;
MIYAMOTO, Y ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1915-1921
[5]   New III-V compound semiconductors TlInGaP for 0.9 mu m to over 10 mu m wavelength range laser diodes and their first successful growth [J].
Asahi, H ;
Yamamoto, K ;
Iwata, K ;
Gonda, S ;
Oe, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (7B) :L876-L879
[6]   INGAASP/INP QUANTUM WIRES FABRICATED BY FOCUSED GA ION-BEAM IMPLANTATION [J].
ASAHI, H ;
YU, SJ ;
TAKIZAWA, J ;
KIM, SG ;
OKUNO, Y ;
KANEKO, T ;
EMURA, S ;
GONDA, S ;
KUBO, H ;
HAMAGUCHI, C ;
HIRAYAMA, Y .
SURFACE SCIENCE, 1992, 267 (1-3) :232-235
[7]  
Bennett BR, 1996, APPL PHYS LETT, V68, P505, DOI 10.1063/1.116381
[8]   InAs-GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization properties [J].
Bimberg, D ;
Ledentsov, NN ;
Grundmann, M ;
Kirstaedter, N ;
Schmidt, OG ;
Mao, MH ;
Ustinov, VM ;
Egorov, AY ;
Zhukov, AE ;
Kopev, PS ;
Alferov, ZI ;
Ruvimov, SS ;
Gosele, U ;
Heydenreich, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :1311-1319
[9]   FORMATION OF LATERAL QUANTUM-WELLS IN VERTICAL SHORT-PERIOD SUPERLATTICES BY STRAIN-INDUCED LATERAL-LAYER ORDERING PROCESS [J].
CHENG, KY ;
HSIEH, KC ;
BAILLARGEON, JN .
APPLIED PHYSICS LETTERS, 1992, 60 (23) :2892-2894
[10]   MBE GROWTH METHOD FOR PYRAMID-SHAPED GAAS MICRO CRYSTALS ON ZNSE(001) SURFACE USING GA DROPLETS [J].
CHIKYOW, T ;
KOGUCHI, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (11) :L2093-L2095
12345