Effect of interfacial layer on the forward current-voltage characteristics of Au/n-Si and Ni/n-Si Schottky diodes

The forward current-voltage (I-V) characteristics of Au/n-Si and Ni/n-Si Schottky diodes at 300 K were analyzed. The values of barrier height and ideality factor from the linear portion of forward log (I)-V characteristics for both samples indicate; the devices are obeying the MIS configuration rather than MS. Also, Cheung's technique was used to calculate the Schottky parameters such as barrier height, ideality factor and series resistance, with and without taking into account the voltage drop across interfacial layer. It is observed that voltage drop across interfacial layer has significant effect on the value of ideality factor and bias dependence of I-V characteristics. Finally, the curve of interface state energy distribution for each is determined.