Characterization of the time-dependent reliability fallout as a function of yield for a 130nm sram device and application to optimize production burn-in

被引：3

作者：

Forbes, KR ^{[1
]}

Schani, P ^{[1
]}

机构：

[1] Motorola Semicond Prod Sector, Austin, TX 78735 USA

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

CMOS reliability; bum-in; defect; yield; reliability modeling; acceleration factor; high-voltage screen;

D O I：

10.1109/RELPHY.2004.1315318

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model is presented to optimize bum-in time based on product yield. A relationship between yield and reliability is developed and demonstrated with tests on a 130nm SRAM test device. Voltage and thermal acceleration are added to this model to appropriately scale predictions to product use conditions. High-voltage test screening is found to have a similar effect as bum-in in reducing infant mortality and thus can also be incorporated into this model. A conditional reliability model is needed to model the effects of both bum-in and high-voltage screening; these effects cannot be modeled as if they simply reduce the defectivity of the population. This approach can be used to predict the amount of high-voltage test screening and bum-in needed in order to qualify a production device built with the same technology.

引用

页码：165 / 170

页数：6