Distribution control of 1.55 μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy

被引:13
|
作者
Wang, Hao [1 ]
Yuan, Jiayue [1 ]
Rieger, Torsten [1 ]
van Veldhoven, Peter J. [1 ]
Nouwens, Peter [1 ]
Eijkemans, Tom J. [1 ]
de Vries, Tjibbe [1 ]
Smalbrugge, Barry [1 ]
Geluk, Erik Jan [1 ]
Notzel, Richard [1 ]
机构
[1] Eindhoven Univ Technol, COBRA Res Inst, NL-5600 MB Eindhoven, Netherlands
关键词
III-V semiconductors; indium compounds; semiconductor quantum dots; surface treatment; vapour phase epitaxial growth; SINGLE;
D O I
10.1063/1.3116146
中图分类号
O59 [应用物理学];
学科分类号
摘要
Distribution control of InAs quantum dots (QDs) on truncated InP pyramids by selective area growth is reported. The top surface of the pyramids is composed of a (100) facet and high-index facets aside. The arrangement of the facets is governed by the shape of the pyramid base and top surface area. The QDs preferentially nucleate on the high-index facets determining position and distribution. The QD number is reduced with shrinking top surface size. Positioning of four, three, two, and single QDs is realized depending on the top surface's shape and size. Emission from single QDs is observed at 1.55 mu m.
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页数:3
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