Solid-State Fault Current Limiters: Silicon versus Silicon Carbide

被引:0
|
作者
Mantooth, H. Alan [1 ]
Saadeh, Osama [1 ]
Johnson, Erik [1 ]
Balda, Juan C. [1 ]
Ang, Simon S. [1 ]
Lostetter, Alexander B. [2 ]
Schupbach, Roberto M. [2 ]
机构
[1] Univ Arkansas, Fayetteville, AR 72701 USA
[2] Arkansas Power Elect Int Inc, Fayetteville, AR 72701 USA
来源
2008 IEEE POWER & ENERGY SOCIETY GENERAL MEETING, VOLS 1-11 | 2008年
关键词
power electronics; fault current limiter; silicon carbide;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
As utilities face increasing fault currents in their systems as a result of increasing demand and/or deployment of new technologies, fault current limiters promise a solution that will mitigate the need for replacing existing breakers as well as being a general protective device for elements connected to the grid. This paper describes some recent advances in semiconductor-based fault current limiting technology including both the more mature silicon developments along with early developments using silicon carbide. The capabilities and limitations of these technologies are compared and contrasted. Some example scenarios of FCLs have been analyzed and are briefly described along with advanced features that semiconductor FCLs may bring to the solution space.
引用
收藏
页码:2638 / +
页数:3
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