Time-resolved reflection high-energy electron diffraction analysis in initial stage of 3C-SiC growth on Si(001) by gas source molecular beam epitaxy

Initial stages of 3C-SiC growth on Si using cracked C3H8 in gas source molecular beam epitaxy were studied using in situ, reflection high-energy electron diffraction. Starting from a Si (001) clean surface showing a (2 x 1) structure, the surface structure changed in the order of Si(2 x 1) --> structure of mixed Si(2 x 1) and Si c(4 x 4) --> 3C-SiC with a continuous supply of cracked C3H8. An activation energy of 46.9 kcal/mol was obtained in the initial stage of 3C-SiC growth. After the appearance of 3C-SiC diffraction spots, island structures of SC-SIG nuclei were observed using a high-resolution scanning electron microscope. Based on these results, growth mechanisms in the 3C-SiC/Si heteroepitaxial system are discussed.